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MLA674872429
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FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 32A (Ta), 169A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.35V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 66nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4960pF @ 10V
FET Feature -
Power Dissipation (Max) 3.6W (Ta), 96W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PQFN (5x6)
Package / Case 8-TQFN Exposed Pad