Fp2189-g Mosfet Rf Hfet 1w Sot89 Itytarg

Product Features
• 50 – 4000 MHz
• +30 dBm P1dB
• +43 dBm Output IP3
• High Drain Efficiency
• 18.5 dB Gain @ 900 MHz
• Lead-free/Green/RoHS-compliant
SOT-89 Package
• MTTF >100 Years

The FP2189 is a high performance 1-Watt HFET

(Heterostructure FET) in a low-cost SOT-89 surfacemount package. This device works optimally at a drain bias of +8 V and 250 mA to achieve +43 dBm output IP3
performance and an output power of +30 dBm at 1-dB
compression, while providing 18.5 dB gain at 900 MHz.

The device conforms to WJ Communications’ long
history of producing high reliability and quality
components.

The FP2189 has an associated MTTF of
greater than 100 years at a mounting temperature of 85 °C
and is available in both the standard SOT-89 package and
the environmentally-friendly lead-free/green/RoHScompliant and green SOT-89 package.

The product is targeted for use as driver amplifiers for
wireless infrastructure where high performance and high
efficiency are required.

Datasheet