Mosfet Chn 20v 4.2a Irlml2502 Sot23 Origen Usa Itytarg

Fab: Infineon Technologies
Series HEXFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 45mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA
Vgs (Max) ±12V
Power Dissipation (Max) 1.25W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Micro3™/SOT-23
Drain to Source Voltage (Vdss) 20V
Gate Charge (Qg) (Max) @ Vgs 12nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 740pF @ 15V