12409
Nuevo producto
Cod: KDY
Origen USA
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Fab: ON Semiconductor
Series QFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 230mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Vgs (Max) ±30V
Power Dissipation (Max) 142W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Drain to Source Voltage (Vdss) 250V
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 25V
Base Product Number FQP1