Igbt Fga25n120antd 25n120 To-3p 1200 V 25a Npt Trench Itytarg

FGA25N120ANTD Features

• NPT Trench Technology, Positive temperature coefficient
• Low saturation voltage: VCE(sat), typ = 2.0V @ IC = 25A and TC = 25°C
• Low switching loss: Eoff, typ = 0.96mJ @ IC = 25A and TC = 25°C
• Extremely enhanced avalanche capability
• TO-3PN package

Brief Description on FGA25N120ANTD

FGA25N120ANTD has Collector-Emitter Voltage VCES of 1200 V. It has Gate-Emitter Voltage VGES of range ± 20 V. The Collector Current IC at the temperature of 25°C is 50A and at the temperature of 100°C is 25A. The Pulsed Collector Current ICM is 90A. The Diode Maximum Forward Current IFM is 150 A. The Maximum Power Dissipation PD rating at 25°C is 312 W and Maximum Power Dissipation rating at 100°C is 125 W.

Where to use FGA25N120ANTD

The FGA25N120ANTD 1200V NPT (Nonpunch-Through) IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. With a simpler device development process and lower switching losses, FGA25N120ANTD is well suited for the resonant or soft switching application such as induction heating, microwave oven.

Origen: China

Marca Generico