Transceptor Aislado Iso3082dw Rs485/rs22 3.3v 256 Nodos Soic16 Itytarg Ver más grande

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Transceptor Aislado Iso3082 Rs485/rs22 3-5v 256 Nodos Soic16 Itytarg

MLA1122023023

Nuevo producto

Cod: GAW / ISO3082

Origen: China

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4 artículos

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$ 10.350,00 IVA Inc.

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The ISO3080 and ISO3086 devices are isolated fullduplex differential line drivers and receivers while the ISO3082 and ISO3088 device are isolated half-duplex differential line transceivers for TIA/EIA 485/422 applications. These devices are ideal for long transmission lines because the ground loop is broken to allow for a much larger common-mode voltage range. The symmetrical isolation barrier of the device is tested to provide 2500Vrms of isolation for 60s per UL 1577 between the bus-line transceiver and the logic-level interface. Any cabled I/O can be subjected to electrical noise transients from various sources. These noise transients can cause damage to the transceiver and/or nearby sensitive circuitry if they are of sufficient magnitude and duration. This isolated device can significantly increase protection and reduce the risk of damage to expensive control circuits.
  • Meets or exceeds TIA/EIA RS-485 requirements
  • Signalling rate up to 20Mbps
  • 1/8 Unit load up to 256 nodes on a bus
  • Thermal shutdown protection
  • 16pF Low bus capacitance (typical)
  • 50kV/µs Typical transient immunity
  • Fail-safe receiver for bus open, short, idle
  • 3.3V Inputs are 5V tolerant
  • 12kV HBM between bus pins and GND2, 6kV HBM between bus pins and GND1 - bus-pin ESD protection
  • Green product and no Sb/Br

Aplicaciones

Seguridad, Industrial, Automatización y Control de Procesos, Control de Motor, HVAC, Automatización Edificación, Comunicaciones y Red

Notas

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

Advertencias

Device has limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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