Scr Tiristor Btw69-1200 1200v 50a Top3 Itytarg

DESCRIPTION Available in high power packages, the / BTW69 Series is suitable in applications where power handling and power dissipation are critical, such as solid state relays, welding equipment, high power motor control. Based on a clip assembly technology, they offer a superior performance in surge current handling capabilities. Thanks to their internal ceramic pad, they provide high voltage insulation (2500V RMS), complying with UL standards (file ref: E81734). ABSOLUTE RATINGS (limiting values)

Symbol IT(RMS) RMS on-state current (180° conduction angle) Average on-state current (180° conduction angle) Non repetitive surge peak on-state current Parameter RD91 TOP3 Ins. RD91 TOP3 Ins. I ²t dI/dt IGM PG(AV) Tstg Tj VRGM I²t Value for fusing Critical rate of rise of on-state current 2 x IGT 100 ns Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range Maximum peak reverse gate voltage A2 S A/µs 610 A Value Unit

Symbol IGT 12 V VGT VGD IH IL dV/dt VTM Vt0 Rd IDRM IRRM VD = VDRM 67 % VDRM Gate open ITM = 125°C Gate open = 33 Test Conditions MIN. MAX. MIN. MAX. MIN. MAX. Value V mA V/µs µA mA Unit

Threshold voltage Dynamic resistance VDRM = VRRM

Symbol Rth(j-c) Rth(j-a) Junction to case (DC) Junction to ambient Parameter RD91 (Insulated) TOP3 Insulated TOP3 Insulated Value 0.9 50 °C/W Unit °C/W

Voltage (xxx) Part Number RD91 TOP3 Ins. Sensitivity Package
Fig. 1: Maximum average power dissipation versus average on-state current.
Fig. 2: Average and D.C. on-state current versus case temperature.
Fig. 3: Relative variation of thermal impedance versus pulse duration.

Fig. 4: Relative variation of gate trigger current, holding current and latching current versus junction temperature.

Fig. 5: Surge peak on-state current versus number of cycles.

Fig. 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width < 10ms, and corresponding value of I²t.