Memoria Eeprom 24lc65 64kbit 400khz  Dip8 Itytarg Ver más grande

Memoria Eeprom 24lc65 64kbit 400khz Dip8 Itytarg


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Tipo: 24LC65/P

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$ 4.000,00 IVA Inc.


The 24LC65  is a “smart” 8K x 8 Serial Electrically Erasable PROM. This device has been developed for advanced, low-power applications such as personal communications, and provides the systems designer with flexibility through the use of many new user-programmable features.

The 24XX65 offers a relocatable 4K bit block of ultra-high-endurance memory for data that changes frequently. The remainder of the array, or 60K bits, is rated at 1,000,000 erase/write (E/W) cycles ensured.

The 24XX65 features an input cache for fast write loads with a capacity of eight pages, or 64 bytes.

This device also features programmable security options for E/W protection of critical data and/or code of up to fifteen 4K blocks. Functional address lines allow the connection of up to eight 24XX65’s on the same bus for up to 512K bits contiguous EEPROM memory.

Advanced CMOS technology makes this device ideal for low-power nonvolatile code and data applications. The 24XX65 is available in the standard 8-pin plastic DIP and 8-pin surface mount SOIJ package.

  • Voltage Operating Range: 1.8V to 6.0V - Peak write current 3 mA at 6.0V - Maximum read current 150 µA at 6.0V - Standby current 1 µA, typical
  • Industry Standard Two-Wire Bus Protocol I2C™ Compatible
  • 8-Byte Page, or Byte modes Available
  • 2 ms Typical Write Cycle Time, Byte or Page
  • 64-Byte Input Cache for Fast Write Loads
  • Up to 8 devices may be connected to the same bus for up to 512K bits total memory
  • Including 100 kHz (1.8V = Vcc < 4.5V) and 400 kHz (4.5V = VCC = 6.0V) Compatibility
  • Programmable Block Security Options
  • Programmable Endurance Options
  • Schmitt Trigger, Filtered Inputs for Noise Suppression
  • Output Slope Control to Eliminate Ground Bounce
  • Self-Timed Erase and Write Cycles
  • Power-on/off Data Protection Circuitry
  • Endurance: - 10,000,000 E/W cycles for a High Endurance Block - 1,000,000 E/W cycles for a Standard Endurance Block
  • Electrostatic Discharge Protection > 4000V
  • Data Retention > 200 years

Datasheet de referencia

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