Igbt Stgwt80h65 650v 120a 469w To3p Itytarg

Igbt Stgwt80h65 650v 120a 469w To3p Itytarg

IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650V
Current - Collector (Ic) (Max) 120A
Current - Collector Pulsed (Icm) 240A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 80A
Power - Max 469W
Switching Energy 2.1mJ (on), 1.5mJ (off)
Input Type Standard
Gate Charge 414nC
Td (on/off) @ 25°C 84ns/280ns
Test Condition 400V, 80A, 10 Ohm, 15V
Reverse Recovery Time (trr) 85ns
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Supplier Device Package TO-3P

Features
· Maximum junction temperature: TJ = 175 °C
· High speed switching series
· Minimized tail current
· VCE(sat) = 1.6 V(typ) @ IC = 80 A
· Safe paralleling
· Tight parameter distribution
· Low thermal resistance
· Very fast soft recovery antiparallel diode

Applications
· Photovoltaic inverters
· High frequency converters

Description
These devices are IGBTs developed using an
advanced proprietary trench gate field-stop
structure. These devices are part of the new HB
series of IGBTs, which represent an optimum
compromise between conduction and switching
loss to maximize the efficiency of any frequency
converter. Furthermore, the slightly positive
VCE(sat) temperature coefficient and very tight
parameter distribution result in safer paralleling
operation.

Datasheet