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The DGD2304 is a high voltage / high speed gate driver capable of driving N-channel MOSFETs and IGBTs in a half bridge configuration.
High voltage processing techniques enable the DGD2304’s high side to switch to 600V in a bootstrap operation.
The DGD2304 logic inputs are compatible with standard TTL and CMOS levels (down to 3.3V) to interface easily with controlling devices.
The driver outputs feature high pulse current buffers designed for minimum driver cross conduction. An internal deadtime of 100ns protects high-voltage MOSFETs from shoot-through.
Driven Configuration Half-Bridge
Channel Type Independent
Number of Drivers 2
Gate Type IGBT, N-Channel MOSFET
Voltage - Supply 10V ~ 20V
Logic Voltage - VIL, VIH 0.7V, 2.3V
Current - Peak Output (Source, Sink) 290mA, 600mA
Input Type Non-Inverting
High Side Voltage - Max (Bootstrap) 600 V
Rise / Fall Time (Typ) 70ns, 35ns
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)