74hc07 Sn74hc07n 7407 Ttl Buffer Oc Dip14 Itytarg

HIGH SPEED: tPD = 6ns (TYP.) at VCC = 6V LOW POWER DISSIPATION: ICC at TA=25°C HIGH NOISE IMMUNITY: VNIH = VNIL 28 % VCC (MIN.) WIDE OPERATING VOLTAGE RANGE: VCC (OPR) to 6V PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 07

DESCRIPTION The is an high speed CMOS HEX OPEN DRAIN BUFFER fabricated with silicon gate C2MOS technology. The internal circuit is composed of 2 stages including buffer output, which enables high noise immunity and stable output.

All inputs are equipped with protection circuits against static discharge and transient excess voltage.

PIN No SYMBOL to 6Y GND VCC NAME AND FUNCTION Data Inputs Data Outputs Ground (0V) Positive Supply Voltage

Symbol VCC VI VO IIK IOK IO Supply Voltage DC Input Voltage DC Output Voltage DC Input Diode Current DC Output Diode Current DC Output Current Parameter Value -0.5 to VCC -0.5 to VCC +150 300 Unit mW °C

ICC or IGND DC VCC or Ground Current Power Dissipation PD Tstg TL Storage Temperature Lead Temperature (10 sec)

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied at 65 °C; derate by 10mW/°C from to 85°C

Symbol VCC VI VO Top tr, tf Supply Voltage Input Voltage Output Voltage Operating Temperature Input Rise and Fall Time VCC = 2.0V VCC = 4.5V VCC = 6.0V Parameter Value 0 to VCC 0 to VCC to 400 Unit °C ns

High Level Input Voltage Low Level Input Voltage Low Level Output Voltage
Output Transition Time Propagation Delay Time Propagation Delay